Invention Grant
- Patent Title: Stacked semiconductor memory device with compound read buffer
- Patent Title (中): 具有复合读缓冲器的堆叠半导体存储器件
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Application No.: US13026462Application Date: 2011-02-14
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Publication No.: US08261004B2Publication Date: 2012-09-04
- Inventor: Hoe-ju Chung
- Applicant: Hoe-ju Chung
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2008-0059055 20080623
- Main IPC: G06F13/00
- IPC: G06F13/00 ; G06F3/00
Abstract:
A stacked memory apparatus operating with a compound read buffer is disclosed. The stacked memory apparatus includes an interface device having a main buffer and a plurality of memory devices each having a device read buffer. Systems incorporating one or more stacked memory apparatuses and related method of performing a read operation are also disclosed.
Public/Granted literature
- US20110138087A1 STACKED SEMICONDUCTOR MEMORY DEVICE WITH COMPOUND READ BUFFER Public/Granted day:2011-06-09
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