Invention Grant
US08261012B2 Non-volatile semiconductor memory comprising power fail circuitry for flushing write data in response to a power fail signal
有权
非易失性半导体存储器包括用于响应于电源故障信号刷新写入数据的电源故障电路
- Patent Title: Non-volatile semiconductor memory comprising power fail circuitry for flushing write data in response to a power fail signal
- Patent Title (中): 非易失性半导体存储器包括用于响应于电源故障信号刷新写入数据的电源故障电路
-
Application No.: US12610073Application Date: 2009-10-30
-
Publication No.: US08261012B2Publication Date: 2012-09-04
- Inventor: Alan Chingtao Kan
- Applicant: Alan Chingtao Kan
- Applicant Address: US CA Irvine
- Assignee: Western Digital Technologies, Inc.
- Current Assignee: Western Digital Technologies, Inc.
- Current Assignee Address: US CA Irvine
- Main IPC: G06F12/16
- IPC: G06F12/16 ; G06F11/16

Abstract:
A non-volatile semiconductor memory is disclosed comprising a first memory device having a memory array including a plurality of memory segments, and a data register for storing write data prior to being written to one of the memory segments. A memory controller comprises a microprocessor for executing access commands received from a host. Interface circuitry generates control signals that enable the microprocessor to communicate with the first memory device. Power fail circuitry transmits a flush command to the first memory device through the interface circuitry in response to a power fail signal, wherein the first memory device responds to the flush command by transferring the write data stored in the data register to the memory segment.
Public/Granted literature
Information query