Invention Grant
- Patent Title: Wiring substrate and semiconductor device
- Patent Title (中): 接线基板和半导体器件
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Application No.: US10973986Application Date: 2004-10-27
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Publication No.: US08263983B2Publication Date: 2012-09-11
- Inventor: Shinji Maekawa , Yasuyuki Arai
- Applicant: Shinji Maekawa , Yasuyuki Arai
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2003-367163 20031028
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L29/76
Abstract:
The present invention provides a thin wiring pattern such as wiring formed by discharging a droplet. In the present invention, a porous (including microporous) substance is formed as a base film in forming pattern by using a droplet discharge method (also referred to as an ink-jetting method). One feature of a wiring substrate according to the present invention provides a porous film and a conductive layer thereon. One feature of a semiconductor device of the present invention provides a thin film transistor in which a gate electrode is formed by the conductive layer having the above-described structure.
Public/Granted literature
- US20050121675A1 Wiring substrate, semiconductor device, and method for manufacturing thereof Public/Granted day:2005-06-09
Information query
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