Invention Grant
- Patent Title: Plasma processing apparatus and plasma processing method
- Patent Title (中): 等离子体处理装置和等离子体处理方法
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Application No.: US10589272Application Date: 2005-02-15
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Publication No.: US08267040B2Publication Date: 2012-09-18
- Inventor: Kiyotaka Ishibashi , Junichi Kitagawa , Singo Furui , Cai Zhong Tian , Jun Yamashita , Nobuhiko Yamamoto , Tetsuya Nishizuka , Toshihisa Nozawa , Shinya Nishimoto , Tamaki Yuasa
- Applicant: Kiyotaka Ishibashi , Junichi Kitagawa , Singo Furui , Cai Zhong Tian , Jun Yamashita , Nobuhiko Yamamoto , Tetsuya Nishizuka , Toshihisa Nozawa , Shinya Nishimoto , Tamaki Yuasa
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2004-037851 20040216
- International Application: PCT/JP2005/002217 WO 20050215
- International Announcement: WO2005/078782 WO 20050825
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23F1/00 ; H01L21/306

Abstract:
In a plasma processing apparatus that processes a wafer in a process vessel by plasma generated by the supply of a microwave, a transmissive window has, in a center area of its lower surface, a hanging portion made of the same material as a material of the transmissive window. Between an outer peripheral surface of the hanging portion and a sidewall inner surface continuing from a support part, a gap is formed, the gap having a gap length of 0.5 to 10 mm, more preferably 0.5 to 5 mm. The generation of a strong electric field and plasma at a contact point is inhibited and an amount of sputtered particles, radicals, or the like reaching the wafer is also reduced.
Public/Granted literature
- US20070264441A1 Plasma Processing Apparatus and Plasma Processing Method Public/Granted day:2007-11-15
Information query
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