Invention Grant
US08267745B2 Methods of grinding semiconductor wafers having improved nanotopology
有权
研磨具有改进的纳米拓扑学的半导体晶片的方法
- Patent Title: Methods of grinding semiconductor wafers having improved nanotopology
- Patent Title (中): 研磨具有改进的纳米拓扑学的半导体晶片的方法
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Application No.: US12899262Application Date: 2010-10-06
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Publication No.: US08267745B2Publication Date: 2012-09-18
- Inventor: Milind S. Bhagavat , Puneet Gupta , Roland R. Vandamme , Takuto Kazama , Noriyuki Tachi
- Applicant: Milind S. Bhagavat , Puneet Gupta , Roland R. Vandamme , Takuto Kazama , Noriyuki Tachi
- Applicant Address: US MO St. Peters
- Assignee: MEMC Electronic Materials, Inc.
- Current Assignee: MEMC Electronic Materials, Inc.
- Current Assignee Address: US MO St. Peters
- Agency: Armstrong Teasdale LLP
- Main IPC: B24B1/00
- IPC: B24B1/00

Abstract:
Methods for holding a workpiece with a hydrostatic pad are disclosed herein. The pad includes hydrostatic pockets formed in a face of the body directly opposed to the wafer. The pockets are adapted for receiving fluid through the body and into the pockets to provide a barrier between the body face and the workpiece while still applying pressure to hold the workpiece during grinding. The hydrostatic pads allow the wafer to rotate relative to the pads about their common axis. The pockets are oriented to reduce hydrostatic bending moments that are produced in the wafer when the grinding wheels shift or tilt relative to the hydrostatic pads, helping prevent nanotopology degradation of surfaces of the wafer commonly caused by shift and tilt of the grinding wheels.
Public/Granted literature
- US20110101504A1 Methods of Grinding Semiconductor Wafers Having Improved Nanotopology Public/Granted day:2011-05-05
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