Invention Grant
- Patent Title: Film forming method and apparatus, and storage medium
- Patent Title (中): 成膜方法和装置以及存储介质
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Application No.: US12568142Application Date: 2009-09-28
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Publication No.: US08268396B2Publication Date: 2012-09-18
- Inventor: Hitoshi Itoh
- Applicant: Hitoshi Itoh
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-095162 20070330
- Main IPC: C23C16/00
- IPC: C23C16/00

Abstract:
A method for film formation is provided that can significantly suppress the amount of a source gas consumed in the formation of a copper film on a substrate by supplying a gas of a metallic source material complex, for example, copper acetate, produced by the sublimation of a solid source material, as a source gas to the substrate to cause a chemical reaction of the source gas. A source gas produced by the sublimation of a solid source material is supplied into a processing chamber, and the source material is adsorbed as a solid onto an adsorption/desorption member within the processing chamber. Next, the source gas supply and exhaust are stopped, and the processing chamber is brought to the state of a closed space. Thereafter, the substrate is heated, and the source material is chemically reacted on the substrate to form a thin film on the substrate.
Public/Granted literature
- US20100015334A1 FILM FORMING METHOD AND APPARATUS, AND STORAGE MEDIUM Public/Granted day:2010-01-21
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