Invention Grant
- Patent Title: Mask blank and method of manufacturing a transfer mask
- Patent Title (中): 掩模毛坯和制造转印掩模的方法
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Application No.: US12567515Application Date: 2009-09-25
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Publication No.: US08268515B2Publication Date: 2012-09-18
- Inventor: Osamu Nozawa
- Applicant: Osamu Nozawa
- Applicant Address: JP Tokyo
- Assignee: Hoya Corporation
- Current Assignee: Hoya Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2008-249338 20080927
- Main IPC: G03F1/20
- IPC: G03F1/20
Abstract:
A mask blank having, on a light-transmissive substrate, a light-shielding film made of a material mainly containing chromium, and adapted to use a resist film for electron beam writing when forming a transfer pattern in the light-shielding film. In the mask blank, an etching mask film made of a material containing a nitride or oxynitride of silicon is formed on an upper surface of the light-shielding film and a conductive mask film made of a conductive material dry-etchable with a fluorine-based gas and a mixed gas of chlorine and oxygen is formed on an upper surface of the etching mask film.
Public/Granted literature
- US20100081066A1 MASK BLANK AND METHOD OF MANUFACTURING A TRANSFER MASK Public/Granted day:2010-04-01
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