Invention Grant
- Patent Title: Formation of a device using block copolymer lithography
- Patent Title (中): 使用嵌段共聚物光刻形成器件
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Application No.: US12135387Application Date: 2008-06-09
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Publication No.: US08268545B2Publication Date: 2012-09-18
- Inventor: Shuaigang Xiao , Xiaomin Yang
- Applicant: Shuaigang Xiao , Xiaomin Yang
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Mueting Raasch & Gebhardt PA
- Main IPC: G03F7/26
- IPC: G03F7/26

Abstract:
The formation of a device using block copolymer lithography is provided. The formation of the device includes forming a block copolymer structure. The block copolymer structure includes a first polymer and a second polymer. The block copolymer structure also includes a first component deposited between adjacent blocks of the first polymer and a second component deposited between adjacent blocks of the second polymer. A template is developed by removing either the first and second polymers or the first and second components from the block copolymer structure. The formation of the device also includes lithographically patterning the device utilizing the block copolymer structure template. The device may be a data storage medium.
Public/Granted literature
- US20090305173A1 FORMATION OF A DEVICE USING BLOCK COPOLYMER LITHOGRAPHY Public/Granted day:2009-12-10
Information query
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