Invention Grant
- Patent Title: Surface plasmon resonance measuring chip and method of manufacture thereof
- Patent Title (中): 表面等离子共振测量芯片及其制造方法
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Application No.: US12761221Application Date: 2010-04-15
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Publication No.: US08268613B2Publication Date: 2012-09-18
- Inventor: Masayuki Naya , Takashi Kubo , Takashi Ito , Yoshimitsu Nomura
- Applicant: Masayuki Naya , Takashi Kubo , Takashi Ito , Yoshimitsu Nomura
- Applicant Address: JP Saitama JP Tokyo
- Assignee: Fujinon Corporation,FUJIFILM Corporation
- Current Assignee: Fujinon Corporation,FUJIFILM Corporation
- Current Assignee Address: JP Saitama JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2001-016632 20010125; JP2001-299568 20010928
- Main IPC: C12M1/34
- IPC: C12M1/34

Abstract:
A surface plasmon resonance measuring apparatus is provided with a dielectric block, a metal film formed on a surface of the dielectric block, a light source for emitting a light beam, an optical system for making the light beam enter the dielectric block at various angles of incidence so that a condition for total internal reflection is satisfied at an interface between the dielectric block and the thin film layer, and a photodetector for detecting the intensity of the light beam satisfying total internal reflection at the interface. In the measurement chip to be utilized in the surface plasmon resonance measuring apparatus, the dielectric block is formed from a synthetic resin in which, when said light beam is p-polarized outside said dielectric block and then strikes the interface, the intensity of a s-polarized component at the interface is 50% or less of the intensity of the light beam at the interface.
Public/Granted literature
- US20100195107A1 SURFACE PLASMON RESONANCE MEASURING CHIP AND METHOD OF MANUFACTURE THEREOF Public/Granted day:2010-08-05
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