Invention Grant
- Patent Title: Edge-emitting semiconductor laser chip
- Patent Title (中): 边缘发射半导体激光芯片
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Application No.: US13011326Application Date: 2011-01-21
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Publication No.: US08268659B2Publication Date: 2012-09-18
- Inventor: Christoph Eichler , Volker Härle , Christian Rumbolz , Uwe Strauss
- Applicant: Christoph Eichler , Volker Härle , Christian Rumbolz , Uwe Strauss
- Applicant Address: DE Regensburg
- Assignee: Osram Opto Semiconductors GmbH
- Current Assignee: Osram Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: Cozen O'Connor
- Priority: DE102006030215 20060630
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method for manufacturing an edge emitting semiconductor laser chip, which has a carrier substrate, an interlayer arranged between the carrier substrate and a component structure of the edge emitting semiconductor laser chip. The interlayer is adapted to provide adhesion between the carrier substrate and the component structure. The component structure has an active zone provided for generating radiation.
Public/Granted literature
- US20110177634A1 Edge-Emitting Semiconductor Laser Chip Public/Granted day:2011-07-21
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