Invention Grant
US08268664B2 Methods of manufacturing a semiconductor device; method of manufacturing a memory cell; semiconductor device; semiconductor processing device; integrated circuit having a memory cell
有权
制造半导体器件的方法; 制造存储单元的方法; 半导体器件; 半导体处理装置; 集成电路具有存储单元
- Patent Title: Methods of manufacturing a semiconductor device; method of manufacturing a memory cell; semiconductor device; semiconductor processing device; integrated circuit having a memory cell
- Patent Title (中): 制造半导体器件的方法; 制造存储单元的方法; 半导体器件; 半导体处理装置; 集成电路具有存储单元
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Application No.: US11714091Application Date: 2007-03-05
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Publication No.: US08268664B2Publication Date: 2012-09-18
- Inventor: Faiz Dahmani
- Applicant: Faiz Dahmani
- Applicant Address: FR Corbeil Essonnes Cedex US CA Sunnyvale
- Assignee: Altis Semiconductor,Adesto Technology Corporation
- Current Assignee: Altis Semiconductor,Adesto Technology Corporation
- Current Assignee Address: FR Corbeil Essonnes Cedex US CA Sunnyvale
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Methods of manufacturing a semiconductor device, a method of manufacturing a memory cell, a semiconductor device, a semiconductor processing device, and a memory cell, are provided. In one embodiment a method of manufacturing a semiconductor device is provided including forming a metal doped chalcogenide layer using light irradiation at least partially during provision of the metal.
Public/Granted literature
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