Invention Grant
US08268665B2 Antimony and germanium complexes useful for CVD/ALD of metal thin films
有权
用于金属薄膜的CVD / ALD的锑和锗络合物
- Patent Title: Antimony and germanium complexes useful for CVD/ALD of metal thin films
- Patent Title (中): 用于金属薄膜的CVD / ALD的锑和锗络合物
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Application No.: US13168979Application Date: 2011-06-26
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Publication No.: US08268665B2Publication Date: 2012-09-18
- Inventor: William Hunks , Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Matthias Stender , Philip S. H. Chen , Gregory T. Stauf , Bryan C. Hendrix
- Applicant: William Hunks , Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Matthias Stender , Philip S. H. Chen , Gregory T. Stauf , Bryan C. Hendrix
- Applicant Address: US CT Danbury
- Assignee: Advanced Technology Materials, Inc.
- Current Assignee: Advanced Technology Materials, Inc.
- Current Assignee Address: US CT Danbury
- Agency: Hultquist, PLLC
- Agent Steven J. Hultquist; Maggie Chappuis
- Main IPC: H01L21/06
- IPC: H01L21/06
Abstract:
Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.
Public/Granted literature
- US20110263100A1 ANTIMONY AND GERMANIUM COMPLEXES USEFUL FOR CVD/ALD OF METAL THIN FILMS Public/Granted day:2011-10-27
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