Invention Grant
- Patent Title: Field-effect transistor and method for fabricating field-effect transistor
- Patent Title (中): 场效应晶体管和制造场效晶体管的方法
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Application No.: US12831454Application Date: 2010-07-07
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Publication No.: US08268666B2Publication Date: 2012-09-18
- Inventor: Yukiko Abe , Naoyuki Ueda , Yuki Nakamura , Yuji Sone
- Applicant: Yukiko Abe , Naoyuki Ueda , Yuki Nakamura , Yuji Sone
- Applicant Address: JP Tokyo
- Assignee: Ricoh Company, Ltd.
- Current Assignee: Ricoh Company, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Cooper & Dunham LLP
- Priority: JP2009-163076 20090709; JP2010-131676 20100609
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/16
Abstract:
A method for fabricating a field-effect transistor having a gate electrode, a source electrode, a drain electrode, and an active layer forming a channel region, the active layer having an oxide semiconductor mainly containing magnesium and indium is disclosed. The method includes a deposition step of depositing an oxide film, a patterning step of patterning the oxide film by processes including etching to obtain the active layer, and a heat-treatment step of heat-treating the obtained active layer subsequent to the patterning step.
Public/Granted literature
- US20110006299A1 FIELD-EFFECT TRANSISTOR AND METHOD FOR FABRICATING FIELD-EFFECT TRANSISTOR Public/Granted day:2011-01-13
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