Invention Grant
US08268679B2 Semiconductor device comprising eFUSES of enhanced programming efficiency
有权
包括具有增强的编程效率的eFUSES的半导体器件
- Patent Title: Semiconductor device comprising eFUSES of enhanced programming efficiency
- Patent Title (中): 包括具有增强的编程效率的eFUSES的半导体器件
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Application No.: US12579654Application Date: 2009-10-15
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Publication No.: US08268679B2Publication Date: 2012-09-18
- Inventor: Oliver Aubel , Jens Poppe , Andreas Kurz , Roman Boschke
- Applicant: Oliver Aubel , Jens Poppe , Andreas Kurz , Roman Boschke
- Applicant Address: KY Grand Cayman
- Assignee: Globalfoundries, Inc.
- Current Assignee: Globalfoundries, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams, Morgan & Amerson, P.C.
- Priority: DE102008054073 20081031
- Main IPC: H01L21/732
- IPC: H01L21/732

Abstract:
In sophisticated integrated circuits, an electronic fuse may be formed such that an increased sensitivity to electromigration may be accomplished by including at least one region of increased current density. This may be accomplished by forming a corresponding fuse region as a non-linear configuration, wherein at corresponding connection portions of linear segments, the desired enhanced current crowding may occur during the application of the programming voltage. Hence, increased reliability and more space-efficient layout of the electronic fuses may be accomplished.
Public/Granted literature
- US20100107403A1 SEMICONDUCTOR DEVICE COMPRISING eFUSES OF ENHANCED PROGRAMMING EFFICIENCY Public/Granted day:2010-05-06
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