Invention Grant
US08268679B2 Semiconductor device comprising eFUSES of enhanced programming efficiency 有权
包括具有增强的编程效率的eFUSES的半导体器件

Semiconductor device comprising eFUSES of enhanced programming efficiency
Abstract:
In sophisticated integrated circuits, an electronic fuse may be formed such that an increased sensitivity to electromigration may be accomplished by including at least one region of increased current density. This may be accomplished by forming a corresponding fuse region as a non-linear configuration, wherein at corresponding connection portions of linear segments, the desired enhanced current crowding may occur during the application of the programming voltage. Hence, increased reliability and more space-efficient layout of the electronic fuses may be accomplished.
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