Invention Grant
- Patent Title: Method of manufacturing a transistor and method of manufacturing a semiconductor device
- Patent Title (中): 晶体管的制造方法及其制造方法
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Application No.: US12578291Application Date: 2009-10-13
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Publication No.: US08268694B2Publication Date: 2012-09-18
- Inventor: Hyuck-Chai Jung , Jun-Hee Lim
- Applicant: Hyuck-Chai Jung , Jun-Hee Lim
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2008-0099930 20081013
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
In a method of manufacturing a transistor, a gate structure is formed on a substrate. First impurities are implanted into the substrate to form an impurity region at an upper portion of the substrate adjacent to the gate structure. An epitaxial layer is formed on the impurity region. An insulation layer having an opening partially exposing the epitaxial layer is formed on the substrate. Second impurities are implanted into a portion of the epitaxial layer exposed by the opening.
Public/Granted literature
- US20100093141A1 METHOD OF MANUFACTURING A TRANSISTOR AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2010-04-15
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