Invention Grant
US08268698B2 Formation of improved SOI substrates using bulk semiconductor wafers
有权
使用块状半导体晶片形成改进的SOI衬底
- Patent Title: Formation of improved SOI substrates using bulk semiconductor wafers
- Patent Title (中): 使用块状半导体晶片形成改进的SOI衬底
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Application No.: US13037608Application Date: 2011-03-01
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Publication No.: US08268698B2Publication Date: 2012-09-18
- Inventor: William K. Henson , Dureseti Chidambarrao , Kern Rim , Hsingjen Wann , Hung Y. Ng
- Applicant: William K. Henson , Dureseti Chidambarrao , Kern Rim , Hsingjen Wann , Hung Y. Ng
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent H. Daniel Schnurmann
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
The present invention relates to a semiconductor-on-insulator (SOI) substrate having one or more device regions. Each device region comprises at least a base semiconductor substrate layer and a semiconductor device layer with a buried insulator layer located therebetween, while the semiconductor device layer is supported by one or more vertical insulating pillars. The vertical insulating pillars each preferably has a ledge extending between the base semiconductor substrate layer and the semiconductor device layer. The SOI substrates of the present invention can be readily formed from a precursor substrate structure with a “floating” semiconductor device layer that is spaced apart from the base semiconductor substrate layer by an air gap and is supported by one or more vertical insulating pillars. The air gap is preferably formed by selective removal of a sacrificial layer located between the base semiconductor substrate layer and the semiconductor device layer.
Public/Granted literature
- US20110147885A1 FORMATION OF IMPROVED SOI SUBSTRATES USING BULK SEMICONDUCTOR WAFERS Public/Granted day:2011-06-23
Information query
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