Invention Grant
US08268727B2 Methods for fabricating FinFET semiconductor devices using planarized spacers
有权
使用平坦化间隔物制造FinFET半导体器件的方法
- Patent Title: Methods for fabricating FinFET semiconductor devices using planarized spacers
- Patent Title (中): 使用平坦化间隔物制造FinFET半导体器件的方法
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Application No.: US12426827Application Date: 2009-04-20
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Publication No.: US08268727B2Publication Date: 2012-09-18
- Inventor: Frank S. Johnson , Douglas Bonser
- Applicant: Frank S. Johnson , Douglas Bonser
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, Inc.
- Current Assignee: GLOBALFOUNDRIES, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
Methods of fabricating a semiconductor device on and in a semiconductor substrate are provided. In accordance with an exemplary embodiment of the invention, one method comprises forming a sacrificial mandrel overlying the substrate, wherein the sacrificial mandrel has sidewalls. Sidewall spacers are formed adjacent the sidewalls of the sacrificial mandrel, the sidewall spacers having an upper portion and a lower portion. The upper portion of the sidewall spacers is removed. The sacrificial mandrel is removed and the semiconductor substrate is etched using the lower portion of the sidewall spacers as an etch mask.
Public/Granted literature
- US20100267238A1 METHODS FOR FABRICATING FINFET SEMICONDUCTOR DEVICES USING PLANARIZED SPACERS Public/Granted day:2010-10-21
Information query
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