Methods of utilizing block copolymers to form patterns

Invention Grant

US08268732B2 Methods of utilizing block copolymers to form patterns 有权

Title translation: 利用嵌段共聚物形成图案的方法

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Patent Title: Methods of utilizing block copolymers to form patterns
Patent Title (中): 利用嵌段共聚物形成图案的方法
Application No.: US12621768

Application Date: 2009-11-19
Publication No.: US08268732B2

Publication Date: 2012-09-18
Inventor: Scott Sills
Applicant: Scott Sills
Applicant Address: US IA Boise
Assignee: Micron Technology, Inc.
Current Assignee: Micron Technology, Inc.
Current Assignee Address: US IA Boise
Agency: Wells St. John P.S.
Main IPC: H01L21/312
IPC: H01L21/312

Methods of utilizing block copolymers to form patterns

Abstract:

Some embodiments include methods of forming patterns utilizing copolymer. A copolymer composition is formed across a substrate. The composition includes subunits A and B, and will be self-assembled to form core structures spaced center-to-center by a distance of L0. The core structures are contained within a repeating pattern of polygonal unit cells. Distances from the core structures to various locations of the unit cells are calculated to determine desired distributions of subunit lengths.

Abstract(Chinese):

一些实施例包括使用共聚物形成图案的方法。在基材上形成共聚物组合物。组合物包括亚基A和B，并且将自组装形成以中心至中心间隔L0的核心结构。核心结构包含在多边形单元电池的重复图案中。计算从核心结构到单位单元的各个位置的距离，以确定亚基长度的期望分布。

Public/Granted literature

US20110117733A1 Methods Of Utilizing Block Copolymers To Form Patterns Public/Granted day:2011-05-19

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/312	......有机层，例如光刻胶（H01L21/3105、H01L21/32优先）