Invention Grant
- Patent Title: Laser beam treatment device and semiconductor device
- Patent Title (中): 激光束处理装置及半导体装置
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Application No.: US10840338Application Date: 2004-05-07
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Publication No.: US08269136B2Publication Date: 2012-09-18
- Inventor: Koichiro Tanaka
- Applicant: Koichiro Tanaka
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2001-345437 20011109
- Main IPC: B23K26/00
- IPC: B23K26/00

Abstract:
A laser beam treatment device capable of solving problem in a conventional technology that any uniform laser anneal cannot be realized since use of a galvano mirror changes the angle of incidence of the laser beam to the substrate and the reflected light from a back side of a transmissive substrate interferes with the reflected light from a surface of a semiconductor film or an interface between the semiconductor film and the substrate. Laser anneal is performed by using the laser beam treatment device comprising a laser, an optical system for shaping the laser beam oscillated from the laser, and a substrate holds to hold a work formed on the transmissive substrate, in which the substrate holder holds a liquid, and the liquid is brought into contact with the surface.
Public/Granted literature
- US20050006655A1 Laser beam treatment device and semiconductor device Public/Granted day:2005-01-13
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