Invention Grant
- Patent Title: Semiconductor device, method of manufacturing semiconductor device, and electronic apparatus
- Patent Title (中): 半导体装置，半导体装置的制造方法以及电子装置
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Application No.: US13027652Application Date: 2011-02-15
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Publication No.: US08269216B2Publication Date: 2012-09-18
- Inventor: Kiyoshi Nakamura
- Applicant: Kiyoshi Nakamura
- Applicant Address: JP Tokyo
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP Tokyo
- Agency: AdvantEdge Law Group, LLC
- Priority: JP2010-034381 20100219
- Main IPC: H01L51/00
- IPC: H01L51/00
Abstract:
A semiconductor device including: a substrate; a first electrode and a second electrode, each being formed on the substrate; a first region that is positioned between the first electrode and the second electrode; a second region that is connected with the first region; an organic semiconductor layer that is provided in the first region and in the second region; and a receptor of the organic semiconductor layer, the receptor being provided so as to surround the second region and having an opening that extends from the second region to the first region.
Public/Granted literature
- US20110204346A1 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS Public/Granted day:2011-08-25
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