Invention Grant
US08269217B2 Display unit with thin film transistor having through holes in source/drain electrode
有权
具有薄膜晶体管的显示单元,源极/漏极具有通孔
- Patent Title: Display unit with thin film transistor having through holes in source/drain electrode
- Patent Title (中): 具有薄膜晶体管的显示单元,源极/漏极具有通孔
-
Application No.: US12696270Application Date: 2010-01-29
-
Publication No.: US08269217B2Publication Date: 2012-09-18
- Inventor: Toshiaki Arai , Narihiro Morosawa , Kazuhiko Tokunaga , Hiroshi Sagawa , Kiwamu Miura
- Applicant: Toshiaki Arai , Narihiro Morosawa , Kazuhiko Tokunaga , Hiroshi Sagawa , Kiwamu Miura
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: SNR Denton US LLP
- Priority: JP2009-027646 20090209
- Main IPC: H01L29/10
- IPC: H01L29/10

Abstract:
A thin film transistor with which oxygen is easily supplied to an oxide semiconductor layer and favorable transistor characteristics are able to be restored and a display unit including the same are provided. The thin film transistor includes sequentially over a substrate a gate electrode, a gate insulting film, an oxide semiconductor layer including a channel region, and a channel protective layer covering the channel region A source electrode and a drain electrode are formed on the oxide semiconductor layer located on both sides of the channel protective layer, and at least one of the source electrode and the drain electrode has an aperture to expose the oxide semiconductor layer.
Public/Granted literature
- US20100200843A1 THIN FILM TRANSISTOR AND DISPLAY UNIT Public/Granted day:2010-08-12
Information query
IPC分类: