Invention Grant
- Patent Title: Light-emitting diode and fabrication method thereof
- Patent Title (中): 发光二极管及其制造方法
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Application No.: US12278646Application Date: 2007-02-06
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Publication No.: US08269236B2Publication Date: 2012-09-18
- Inventor: Masao Arimitsu
- Applicant: Masao Arimitsu
- Applicant Address: JP Tokyo
- Assignee: Showa Denko K.K.
- Current Assignee: Showa Denko K.K.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2006-030475 20060208; JP2006-032028 20060209
- International Application: PCT/JP2007/052448 WO 20070206
- International Announcement: WO2007/091704 WO 20070816
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L21/00
Abstract:
A light-emitting diode (10) has a light-extracting surface and includes a transparent substrate (14), a compound semiconductor layer (13) bonded to the transparent substrate, a light-emitting part (12) contained in the compound semiconductor layer, a light-emitting layer (133) contained in the light-emitting part and formed of (AlXGa1-X)YIn1-YP(0≦X≦1, 0
Public/Granted literature
- US20090008661A1 LIGHT-EMITTING DIODE AND FABRICATION METHOD THEREOF Public/Granted day:2009-01-08
Information query
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