Invention Grant
- Patent Title: Nonvolatile semiconductor memory device and manufacturing method therefor
- Patent Title (中): 非易失性半导体存储器件及其制造方法
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Application No.: US12481259Application Date: 2009-06-09
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Publication No.: US08269269B2Publication Date: 2012-09-18
- Inventor: Motoki Sugi
- Applicant: Motoki Sugi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-233824 20080911
- Main IPC: H01L29/792
- IPC: H01L29/792
Abstract:
A gate electrode of a select gate transistor includes a gate insulating film that is formed on a semiconductor substrate, a lower gate electrode that is formed on the gate insulating film and that has a tapered portion in which a side surface on a side of a gate electrode of a memory cell transistor is in a tapered shape, a first oxide film, a silicon nitride film, a second oxide film, and a conductive film that are sequentially formed on the tapered portion, and an upper gate electrode that is connected to the conductive film and the lower gate electrode.
Public/Granted literature
- US20100059813A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREFOR Public/Granted day:2010-03-11
Information query
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