A vertical semiconductor component having a semiconductor body, which has an inner region and an edge region that is arranged between the inner region and an edge of the semiconductor body. At least one semiconductor junction between a first semiconductor zone of a first conduction type, said first semiconductor zone being arranged in the region of a first side of the semiconductor body in the inner region, and a second semiconductor zone of the second conduction type, said second semiconductor zone adjoining the first semiconductor zone in the vertical direction. A contiguous third semiconductor zone of the second conduction type, said third semiconductor zone being arranged at a distance from the first semiconductor zone in the second semiconductor zone in the vertical direction of the semiconductor body and extending as far as the edge region in the lateral direction of the semiconductor body, and the doping of the third semiconductor zone being selected in such a manner that it is completely depleted of charge carriers when a reverse voltage is applied to the pn junction.