Invention Grant
US08269290B2 Semiconductor device including a plurality of semiconductor substrates and method of manufacturing the same 有权
包括多个半导体衬底的半导体器件及其制造方法

  • Patent Title: Semiconductor device including a plurality of semiconductor substrates and method of manufacturing the same
  • Patent Title (中): 包括多个半导体衬底的半导体器件及其制造方法
  • Application No.: US12461971
    Application Date: 2009-08-31
  • Publication No.: US08269290B2
    Publication Date: 2012-09-18
  • Inventor: Kazuhiko Sugiura
  • Applicant: Kazuhiko Sugiura
  • Applicant Address: JP Kariya
  • Assignee: DENSO CORPORATION
  • Current Assignee: DENSO CORPORATION
  • Current Assignee Address: JP Kariya
  • Agency: Posz Law Group, PLC
  • Priority: JP2008-235813 20080915; JP2009-92393 20090406
  • Main IPC: H01L29/84
  • IPC: H01L29/84
Semiconductor device including a plurality of semiconductor substrates and method of manufacturing the same
Abstract:
In a semiconductor device, a first semiconductor substrate includes a first element on a first-surface side thereof, and a second semiconductor substrate includes a second element and a wiring part on a first-surface side thereof. The first semiconductor substrate and the second semiconductor substrate are attached with each other in such a manner that a first surface of the first semiconductor substrate is opposite a first surface of the second semiconductor substrate. A hole is provided from a second surface of the first semiconductor substrate to the wiring part through the first semiconductor substrate, and a sidewall of the hole is insulated. A drawing wiring part made of a conductive member fills the hole.
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