Invention Grant
US08269291B2 Low temperature Bi-CMOS compatible process for MEMS RF resonators and filters
失效
用于MEMS RF谐振器和滤波器的低温Bi-CMOS兼容工艺
- Patent Title: Low temperature Bi-CMOS compatible process for MEMS RF resonators and filters
- Patent Title (中): 用于MEMS RF谐振器和滤波器的低温Bi-CMOS兼容工艺
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Application No.: US13007130Application Date: 2011-01-14
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Publication No.: US08269291B2Publication Date: 2012-09-18
- Inventor: Leena Paivikki Buchwalter , Kevin Kok Chan , Timothy Joseph Dalton , Christopher Vincent Jahnes , Jennifer Louise Lund , Kevin Shawn Petraraca , James Louis Speidell , James Francis Ziegler
- Applicant: Leena Paivikki Buchwalter , Kevin Kok Chan , Timothy Joseph Dalton , Christopher Vincent Jahnes , Jennifer Louise Lund , Kevin Shawn Petraraca , James Louis Speidell , James Francis Ziegler
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: F. Chau & Associates, LLC
- Agent Louis J. Percello, Esq.
- Main IPC: G01L9/00
- IPC: G01L9/00 ; H01L29/84

Abstract:
A microelectromechanical system (MEMS) resonator or filter including a first conductive layer, one or more electrodes patterned in the first conductive layer which serve the function of signal input, signal output, or DC biasing, or some combination of these functions, an evacuated cavity, a resonating member comprised of a lower conductive layer and an upper structural layer, a first air gap between the resonating member and one or more of the electrodes, an upper membrane covering the cavity, and a second air gap between the resonating member and the upper membrane.
Public/Granted literature
- US20110109405A1 Low Temperature BI-CMOS Compatible Process For MEMS RF Resonators and Filters Public/Granted day:2011-05-12
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