Invention Grant
US08269292B2 Magnetic tunnel junction (MTJ) to reduce spin transfer magnetizaton switching current
有权
磁隧道结（MTJ）降低自旋转移磁化开关电流
- Patent Title: Magnetic tunnel junction (MTJ) to reduce spin transfer magnetizaton switching current
- Patent Title (中): 磁隧道结（MTJ）降低自旋转移磁化开关电流
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Application No.: US12584946Application Date: 2009-09-15
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Publication No.: US08269292B2Publication Date: 2012-09-18
- Inventor: Cheng T. Horng , Ru-Ying Tong
- Applicant: Cheng T. Horng , Ru-Ying Tong
- Applicant Address: US CA Milpitas
- Assignee: MagIC Technologies, Inc.
- Current Assignee: MagIC Technologies, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/00 ; G11C11/00 ; G11C11/14
Abstract:
A MTJ that minimizes spin-transfer magnetization switching current (Jc) in a Spin-RAM to
Public/Granted literature
- US20100006960A1 Novel magnetic tunnel junction (MTJ) to reduce spin transfer magnetizaton switching current Public/Granted day:2010-01-14
Information query
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