Invention Grant
US08269304B2 MOS gate power semiconductor device with anode of protection diode connected to collector electrode
有权
具有保护二极管的阳极的MOS栅极功率半导体器件连接到集电极
- Patent Title: MOS gate power semiconductor device with anode of protection diode connected to collector electrode
- Patent Title (中): 具有保护二极管的阳极的MOS栅极功率半导体器件连接到集电极
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Application No.: US12705246Application Date: 2010-02-12
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Publication No.: US08269304B2Publication Date: 2012-09-18
- Inventor: Kwang-Hoon Oh , Byoung-Ho Choo , Soo-Seong Kim , Chong-Man Yun
- Applicant: Kwang-Hoon Oh , Byoung-Ho Choo , Soo-Seong Kim , Chong-Man Yun
- Applicant Address: KR Anyang-si
- Assignee: Trinno Technology Co., Ltd.
- Current Assignee: Trinno Technology Co., Ltd.
- Current Assignee Address: KR Anyang-si
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2009-0085816 20090911
- Main IPC: H01L21/761
- IPC: H01L21/761
Abstract:
A MOS-gate power semiconductor device includes: a main device area including an active area and an edge termination area; and an auxiliary device area horizontally formed outside the main device area so as to include one or more diodes. Accordingly, it is possible to protect a circuit from an overcurrent and thus to prevent deterioration and/or destruction of a device due to the overcurrent.
Public/Granted literature
- US20110062490A1 MOS GATE POWER SEMICONDUCTOR DEVICE Public/Granted day:2011-03-17
Information query
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