Invention Grant
- Patent Title: Isolation regions
- Patent Title (中): 隔离区
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Application No.: US12901825Application Date: 2010-10-11
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Publication No.: US08269306B2Publication Date: 2012-09-18
- Inventor: Sukesh Sandhu
- Applicant: Sukesh Sandhu
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: H01L21/70
- IPC: H01L21/70

Abstract:
A dielectric liner is formed in first and second trenches respectively in first and second portions of a substrate. A layer of material is formed overlying the dielectric liner so as to substantially concurrently substantially fill the first trench and partially fill the second trench. The layer of material is removed substantially concurrently from the first and second trenches to expose substantially all of the dielectric liner within the second trench and to form a plug of the material in the one or more first trenches. A second layer of dielectric material is formed substantially concurrently on the plug in the first trench and on the exposed portion of the dielectric liner in the second trench. The second layer of dielectric material substantially fills a portion of the first trench above the plug and the second trench.
Public/Granted literature
- US20110024822A1 ISOLATION REGIONS Public/Granted day:2011-02-03
Information query
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