Invention Grant
- Patent Title: Shallow trench isolation structure and method for forming the same
- Patent Title (中): 浅沟隔离结构及其形成方法
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Application No.: US13119004Application Date: 2011-01-27
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Publication No.: US08269307B2Publication Date: 2012-09-18
- Inventor: Huicai Zhong , Haizhou Yin , Qingqing Liang , Huilong Zhu
- Applicant: Huicai Zhong , Haizhou Yin , Qingqing Liang , Huilong Zhu
- Applicant Address: CN Beijing
- Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee Address: CN Beijing
- Agency: Goodwin Procter LLP
- Priority: CN201010552589 20101119
- International Application: PCT/CN2011/070693 WO 20110127
- International Announcement: WO2012/065370 WO 20120524
- Main IPC: H01L29/15
- IPC: H01L29/15
Abstract:
The invention provides a STI structure and a method for manufacturing the same. The STI includes a semiconductor substrate; a first trench formed on the upper surface of the semiconductor substrate and filled with an epitaxial layer, wherein the upper surface of the epitaxial layer is higher than that of the semiconductor substrate; and a second trench formed on the epitaxial layer and filled with a first dielectric layer, wherein the upper surface of the first dielectric layer is flush with that of the epitaxial layer, and the width of the second trench is smaller than that of the first trench. The invention reduces the influences of divots on performance of the semiconductor device.
Public/Granted literature
- US20120126244A1 SHALLOW TRENCH ISOLATION STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2012-05-24
Information query
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