Invention Grant
US08269309B2 Semiconductor device with a fuse formed by a damascene technique and a method of manufacturing the same
有权
具有通过镶嵌技术形成的保险丝的半导体器件及其制造方法
- Patent Title: Semiconductor device with a fuse formed by a damascene technique and a method of manufacturing the same
- Patent Title (中): 具有通过镶嵌技术形成的保险丝的半导体器件及其制造方法
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Application No.: US13071546Application Date: 2011-03-25
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Publication No.: US08269309B2Publication Date: 2012-09-18
- Inventor: Katsuhiko Hotta , Kyoko Sasahara , Taichi Hayamizu , Yuichi Kawano
- Applicant: Katsuhiko Hotta , Kyoko Sasahara , Taichi Hayamizu , Yuichi Kawano
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2005-197939 20050706
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L23/58
Abstract:
In order to improve the reliability of a semiconductor device having a fuse formed by a Damascene technique, a barrier insulating film and an inter-layer insulating film are deposited over a fourth-layer wiring and a fuse. The barrier insulating film is an insulating film for preventing the diffusion of Cu and composed of a SiCN film deposited by plasma CVD like the underlying barrier insulating film. The thickness of the barrier insulating film covering the fuse is larger than the thickness of the underlying barrier insulating film so as to improve the moisture resistance of the fuse.
Public/Granted literature
- US20110169128A1 SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME Public/Granted day:2011-07-14
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