Invention Grant
- Patent Title: Semiconductor storage device and manufacturing method thereof
- Patent Title (中): 半导体存储装置及其制造方法
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Application No.: US13027668Application Date: 2011-02-15
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Publication No.: US08269325B2Publication Date: 2012-09-18
- Inventor: Ryoji Matsushima
- Applicant: Ryoji Matsushima
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-030350 20100215; JP2010-222469 20100930; JP2010-279877 20101215
- Main IPC: H01L23/495
- IPC: H01L23/495
Abstract:
According to one embodiment, a semiconductor storage device includes an organic board provided with external connection terminals on one surface and formed as an individual piece into a plane shape substantially identical to that of an area where the external connection terminals are provided, a lead frame having a mounting area positioned relative to the organic board, and a semiconductor memory chip bonded to the mounting area.
Public/Granted literature
- US20110198740A1 SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2011-08-18
Information query
IPC分类:
