A MOSFET pair with a stack capacitor is disclosed herein. It can regulate the input voltage and optimize a short EMI loop. It has a bottom lead frame and an up lead frame, which can simultaneously dissipate the heat generated by two MOSFETs to achieve excellent thermal-dissipation. It can adopt solder, Ag epoxy, or gold balls to implement the electrical bonding of two MOSFETs with the bottom lead frame and the up lead frame to achieve excellent structural flexibility. A device, such as an IGBT, a diode, an inductor, a choke, and a heat sink, can be stacked above the up lead frame to form a powerful SiP module. A corresponding method of manufacturing the MOSFET pair with a stack capacitor is also disclosed herein, which is simple, time-saving, flexible, cost-effective, and facile.