Invention Grant
- Patent Title: Multilayer semiconductor device and electronic equipment
- Patent Title (中): 多层半导体器件和电子设备
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Application No.: US13008579Application Date: 2011-01-18
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Publication No.: US08269335B2Publication Date: 2012-09-18
- Inventor: Takatoshi Osumi
- Applicant: Takatoshi Osumi
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2008-270414 20081021
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A multilayer semiconductor device includes an interconnect substrate provided with first electrode lands and connection terminals on a top surface; a semiconductor chip mounted on the top surface of the interconnect substrate; first connecting members connecting the first electrode lands to a circuit formation surface of the semiconductor chip; first metal posts provided on the connection terminals; encapsulating resin filling a space between the interconnect substrate and the semiconductor chip; a package provided with second electrode lands on a main surface; and second connecting members electrically connecting the first metal posts to the second electrode lands.
Public/Granted literature
- US20110115081A1 MULTILAYER SEMICONDUCTOR DEVICE AND ELECTRONIC EQUIPMENT Public/Granted day:2011-05-19
Information query
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