Invention Grant
- Patent Title: Semiconductor device including a pressure-contact section
- Patent Title (中): 包括压接部的半导体装置
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Application No.: US12234337Application Date: 2008-09-19
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Publication No.: US08269343B2Publication Date: 2012-09-18
- Inventor: Kouichi Meguro
- Applicant: Kouichi Meguro
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Priority: JP2007-241761 20070919
- Main IPC: H01L23/34
- IPC: H01L23/34

Abstract:
A semiconductor device in accordance with one embodiment of the invention can include a substrate onto which a wiring pattern is formed. In addition, the semiconductor device can include a plurality of semiconductor packages. Each semiconductor package can include a lead frame that is coupled to an electrode of a semiconductor chip. Each lead frame can be located on a side surface and a bottom surface of the semiconductor package. In addition, the semiconductor device can include a pressure-contact section for receiving the plurality of semiconductor packages and for causing the plurality of semiconductor packages to come into contact with the wiring pattern.
Public/Granted literature
- US20090236721A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2009-09-24
Information query
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