Invention Grant
US08269343B2 Semiconductor device including a pressure-contact section 有权
包括压接部的半导体装置

  • Patent Title: Semiconductor device including a pressure-contact section
  • Patent Title (中): 包括压接部的半导体装置
  • Application No.: US12234337
    Application Date: 2008-09-19
  • Publication No.: US08269343B2
    Publication Date: 2012-09-18
  • Inventor: Kouichi Meguro
  • Applicant: Kouichi Meguro
  • Applicant Address: US CA Sunnyvale
  • Assignee: Spansion LLC
  • Current Assignee: Spansion LLC
  • Current Assignee Address: US CA Sunnyvale
  • Priority: JP2007-241761 20070919
  • Main IPC: H01L23/34
  • IPC: H01L23/34
Semiconductor device including a pressure-contact section
Abstract:
A semiconductor device in accordance with one embodiment of the invention can include a substrate onto which a wiring pattern is formed. In addition, the semiconductor device can include a plurality of semiconductor packages. Each semiconductor package can include a lead frame that is coupled to an electrode of a semiconductor chip. Each lead frame can be located on a side surface and a bottom surface of the semiconductor package. In addition, the semiconductor device can include a pressure-contact section for receiving the plurality of semiconductor packages and for causing the plurality of semiconductor packages to come into contact with the wiring pattern.
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