Invention Grant
US08269534B2 Delay locked loop circuit and semiconductor device having the delay locked loop circuit 有权
具有延迟锁定环电路的延迟锁定环电路和半导体器件

  • Patent Title: Delay locked loop circuit and semiconductor device having the delay locked loop circuit
  • Patent Title (中): 具有延迟锁定环电路的延迟锁定环电路和半导体器件
  • Application No.: US12879930
    Application Date: 2010-09-10
  • Publication No.: US08269534B2
    Publication Date: 2012-09-18
  • Inventor: Jun Bae Kim
  • Applicant: Jun Bae Kim
  • Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
  • Assignee: Samsung Electronics Co., Ltd.
  • Current Assignee: Samsung Electronics Co., Ltd.
  • Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
  • Agency: Muir Patent Consulting, PLLC
  • Priority: KR10-2009-0107354 20091109
  • Main IPC: H03L7/06
  • IPC: H03L7/06
Delay locked loop circuit and semiconductor device having the delay locked loop circuit
Abstract:
A delay locked loop (DLL) circuit is disclosed. The DLL circuit includes a delay circuit and a phase adjusting circuit. The phase adjusting circuit is configured to receive a clock signal output from the delay circuit, pass the clock signal through a N-divider and a replica path to create a N-divided delay signal, and detect phase information about an external clock signal in response to a rising edge and a falling edge of the N-divided delay signal, wherein N denotes a natural number. The delay circuit is configured to output the clock signal by adjusting a phase of the external clock signal in response to a result of the detection. A semiconductor device, semiconductor system, and method are also disclosed.
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