A method for reading and writing a memory having n rows and A columns includes a first step of writing data in 0th to (n−2)th rows by a first technique; a second step of writing data in (n−1)th row per column and reading data in the 0th section by a second technique; a third step of writing data in 0th to (n−2)th sections by a third technique and reading data in 1st to (n−1)th sections by the second technique, a fourth step of writing data in the (n−1)th section by the third technique and reading data in 0th row by a fourth technique; a fifth step of writing data in 0th to (n−2)th rows by the first technique and reading data in 1st to (n−1)th rows by the fourth technique; and a sixth step of returning to the second step.