Invention Grant
- Patent Title: Semiconductor device with a plurality of power supply systems
- Patent Title (中): 具有多个电源系统的半导体装置
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Application No.: US12929206Application Date: 2011-01-07
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Publication No.: US08270132B2Publication Date: 2012-09-18
- Inventor: Masanori Tanaka , Morihisa Hirata , Hitoshi Okamoto
- Applicant: Masanori Tanaka , Morihisa Hirata , Hitoshi Okamoto
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2006-015146 20060124
- Main IPC: H02H9/04
- IPC: H02H9/04

Abstract:
A protection circuit that includes a first power supply system including a first power supply and a first ground, a second power supply system including a second power supply and a second ground, the second power supply system being connected to the first power supply system via a signal line through which signal transfer is performed between a circuit in the first power supply system and a circuit in the second power supply system, and a control circuit that, when coupled to an electro-static discharge (ESD) stress being applied to the first power supply system controls a switch, the switch being provided between the signal line and the first power supply.
Public/Granted literature
- US20110102962A1 Semiconductor device with a plurality of power supply systems Public/Granted day:2011-05-05
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