Invention Grant
US08270202B2 Programming non-volatile storage element using current from other element
有权
使用来自其他元素的电流编程非易失性存储元件
- Patent Title: Programming non-volatile storage element using current from other element
- Patent Title (中): 使用来自其他元素的电流编程非易失性存储元件
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Application No.: US13154832Application Date: 2011-06-07
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Publication No.: US08270202B2Publication Date: 2012-09-18
- Inventor: Roy E. Scheuerlein
- Applicant: Roy E. Scheuerlein
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D, LLC
- Current Assignee: SanDisk 3D, LLC
- Current Assignee Address: US CA Milpitas
- Agency: Vierra Magen Marcus & DeNiro LLP
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
Control circuitry provides control signals to a common X line and a set of Y lines to change a first data storage element of the multiple data storage elements from a first state to a second state by passing a current into the first data storage element from a different Y line through a different storage element. The control circuitry provides control signals to the common X line and the set of Y lines to sequentially change additional data storage elements of the multiple data storage elements from the first state to the second state by passing currents into the additional data storage elements from data storage elements of the multiple data storage elements that were previously changed to the second state and their associated different Y lines.
Public/Granted literature
- US20110235405A1 PROGRAMMING NON-VOLATILE STORAGE ELEMENT USING CURRENT FROM OTHER ELEMENT Public/Granted day:2011-09-29
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