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US08270205B2 Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods forming the same 有权
具有界面粘合加热层的可变电阻记忆装置，使用其的系统及其形成方法

  • Patent Title: Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods forming the same
  • Patent Title (中): 具有界面粘合加热层的可变电阻记忆装置，使用其的系统及其形成方法
  • Application No.: US12546387
    Application Date: 2009-08-24
  • Publication No.: US08270205B2
    Publication Date: 2012-09-18
  • Inventor: Jun Liu
  • Applicant: Jun Liu
  • Applicant Address: US ID Boise
  • Assignee: Micron Technology, Inc.
  • Current Assignee: Micron Technology, Inc.
  • Current Assignee Address: US ID Boise
  • Agency: Dickstein Shapiro LLP
  • Main IPC: G11C11/00
  • IPC: G11C11/00
Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods forming the same
Abstract:
A variable resistance memory element and method of forming the same. The memory element includes a first electrode, a resistivity interfacial layer having a first surface coupled to said first electrode; a resistance changing material, e.g, a phase change material, having a first surface coupled to a second surface of said resistivity interfacial layer, and a second electrode coupled to a second surface of said resistance changing material.
Abstract(Chinese):

一种可变电阻记忆元件及其形成方法。 存储元件包括第一电极，电阻率界面层，其具有耦合到所述第一电极的第一表面; 电阻变化材料，例如 相变材料，具有耦合到所述电阻率界面层的第二表面的第一表面，以及耦合到所述电阻变化材料的第二表面的第二电极。

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