Invention Grant
- Patent Title: Electromechanical switch and method of forming the same
- Patent Title (中): 机电开关及其形成方法
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Application No.: US13082605Application Date: 2011-04-08
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Publication No.: US08270211B2Publication Date: 2012-09-18
- Inventor: Min-Sang Kim , Ji-Myoung Lee , Hyun-Jun Bae , Dong-Won Kim , Jun Seo , Weonwi Jang , Keun-Hwi Cho
- Applicant: Min-Sang Kim , Ji-Myoung Lee , Hyun-Jun Bae , Dong-Won Kim , Jun Seo , Weonwi Jang , Keun-Hwi Cho
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR2008-0026812 20080324; KR2008-0085041 20080829
- Main IPC: G11C11/50
- IPC: G11C11/50
Abstract:
A memory device includes a storage node, a first electrode, and a second electrode formed in a memory cell, the storage node stores electrical charges, the first electrode comprising a first portion electrically connected to a second portion, the first portion moves to connect to the storage node when the second electrode is energized.
Public/Granted literature
- US20110182111A1 ELECTROMECHANICAL SWITCH AND METHOD OF FORMING THE SAME Public/Granted day:2011-07-28
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