Invention Grant
- Patent Title: Nonvolatile memory device and method of programming the same
- Patent Title (中): 非易失存储器件及其编程方法
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Application No.: US12826064Application Date: 2010-06-29
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Publication No.: US08270215B2Publication Date: 2012-09-18
- Inventor: Byoung Sung You , Jin Su Park , Seong Je Park
- Applicant: Byoung Sung You , Jin Su Park , Seong Je Park
- Applicant Address: KR Icheon-si, Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si, Gyeonggi-do
- Agency: Lowe Hauptman Ham & Berner, LLP
- Priority: KR10-2009-0058464 20090629
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
In a nonvolatile memory device, a cache program operation for the next data is performed in a first latch, and a verification program operation for the current data is performed using a second latch. Thus, data collision can be avoided and execution time can be reduced.
Public/Granted literature
- US20100329030A1 NONVOLATILE MEMORY DEVICE AND METHOD OF PROGRAMMING THE SAME Public/Granted day:2010-12-30
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