Invention Grant
- Patent Title: Voltage discharge circuits and methods
- Patent Title (中): 电压放电电路及方法
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Application No.: US12893400Application Date: 2010-09-29
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Publication No.: US08270224B2Publication Date: 2012-09-18
- Inventor: Agostino Macerola
- Applicant: Agostino Macerola
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: G11C16/06
- IPC: G11C16/06

Abstract:
Memory devices, memory systems, discharge circuits, and methods for discharging a capacitance are disclosed. In one such memory device, a discharge circuit is coupled to memory support circuitry. When a supply voltage decreases to be less than or equal to a trip voltage, the discharge circuit discharges a voltage from a capacitance of the memory support circuitry.
Public/Granted literature
- US20120075935A1 VOLTAGE DISCHARGE CIRCUITS AND METHODS Public/Granted day:2012-03-29
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