Invention Grant
US08270226B2 Memory module having a plurality of phase change memories, buffer RAM and NAND flash memory
有权
具有多个相变存储器，缓冲RAM和NAND闪速存储器的存储器模块
- Patent Title: Memory module having a plurality of phase change memories, buffer RAM and NAND flash memory
- Patent Title (中): 具有多个相变存储器，缓冲RAM和NAND闪速存储器的存储器模块
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Application No.: US12656224Application Date: 2010-01-21
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Publication No.: US08270226B2Publication Date: 2012-09-18
- Inventor: Jangseok Choi , Dongyang Lee
- Applicant: Jangseok Choi , Dongyang Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2009-0016399 20090226
- Main IPC: G11C7/22
- IPC: G11C7/22
Abstract:
A memory module comprises a plurality of main memories; a buffer RAM configured to temporarily store data being provided to or read from the main memories and to perform a buffer function between an external device and the main memories; and a NAND flash memory configured to store data of the buffer RAM during an interruption of power being supplied to the buffer RAM.
Public/Granted literature
- US20100214813A1 Memory module having a plurality of phase change memories, buffer RAM and nand flash memory Public/Granted day:2010-08-26
Information query
