Invention Grant
US08270228B2 Semiconductor device having nonvolatile memory element and data processing system including the same 有权
具有非易失性存储元件的半导体器件和包括该半导体器件的数据处理系统

Semiconductor device having nonvolatile memory element and data processing system including the same
Abstract:
A semiconductor device includes a fuse element, a read-out circuit that reads out a memory content of the fuse element in response to a first internal reset signal that is activated in response to transition of an external reset signal, and a latch circuit that holds therein the memory content read out by the read-out circuit and is reset by a second internal reset signal that is activated based on an activation period of the external reset signal. With this configuration, even when the activation period of the external reset signal is long, the time for which a current flows through the fuse element can be shortened, thereby making it possible to reduce a current consumption at the time of a reset operation.
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