Invention Grant
US08270228B2 Semiconductor device having nonvolatile memory element and data processing system including the same
有权
具有非易失性存储元件的半导体器件和包括该半导体器件的数据处理系统
- Patent Title: Semiconductor device having nonvolatile memory element and data processing system including the same
- Patent Title (中): 具有非易失性存储元件的半导体器件和包括该半导体器件的数据处理系统
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Application No.: US12797948Application Date: 2010-06-10
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Publication No.: US08270228B2Publication Date: 2012-09-18
- Inventor: Yoshio Mizukane , Hiroki Fujisawa
- Applicant: Yoshio Mizukane , Hiroki Fujisawa
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Morrison & Foerster LLP
- Priority: JP2009-035805 20090218; JP2010-027367 20100210
- Main IPC: G11C7/10
- IPC: G11C7/10

Abstract:
A semiconductor device includes a fuse element, a read-out circuit that reads out a memory content of the fuse element in response to a first internal reset signal that is activated in response to transition of an external reset signal, and a latch circuit that holds therein the memory content read out by the read-out circuit and is reset by a second internal reset signal that is activated based on an activation period of the external reset signal. With this configuration, even when the activation period of the external reset signal is long, the time for which a current flows through the fuse element can be shortened, thereby making it possible to reduce a current consumption at the time of a reset operation.
Public/Granted literature
- US20100302875A1 SEMICONDUCTOR DEVICE HAVING NONVOLATILE MEMORY ELEMENT AND DATA PROCESSING SYSTEM INCLUDING THE SAME Public/Granted day:2010-12-02
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