Invention Grant
- Patent Title: Semiconductor memory apparatus
- Patent Title (中): 半导体存储装置
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Application No.: US13158778Application Date: 2011-06-13
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Publication No.: US08270229B2Publication Date: 2012-09-18
- Inventor: Kyung Hoon Kim , Sang Sic Yoon , Hong Bae Kim
- Applicant: Kyung Hoon Kim , Sang Sic Yoon , Hong Bae Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2008-0100550 20081014
- Main IPC: G11C7/10
- IPC: G11C7/10

Abstract:
A semiconductor memory apparatus includes a first data selection section inputted with the first data and second data and output one of the first data and the second data as first selection data in response to an address signal, a second data selection section inputted with the second data and the first selection data and output one of the second data and the first selection data as second selection data depending upon an input and output mode, and a data output section configured to be inputted with the first and second selection data and output first and second output data.
Public/Granted literature
- US20110242922A1 SEMICONDUCTOR MEMORY APPARATUS Public/Granted day:2011-10-06
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