Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US13313828Application Date: 2011-12-07
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Publication No.: US08270233B2Publication Date: 2012-09-18
- Inventor: Sun Young Hwang
- Applicant: Sun Young Hwang
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Cooper & Dunham LLP
- Agent John P. White
- Priority: KR10-2008-0097384 20081002
- Main IPC: G11C5/14
- IPC: G11C5/14
Abstract:
A semiconductor memory device includes a first sense amplifier which senses data on a first line pair and generates a first output signal; and a test unit which senses the data on a first line pair and transfers a second output signal to a second line in response to a test mode signal.
Public/Granted literature
- US20120075937A1 Semiconductor Memory Device Public/Granted day:2012-03-29
Information query
