Invention Grant
- Patent Title: Memory Device
- Patent Title (中): 存储设备
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Application No.: US13050142Application Date: 2011-03-17
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Publication No.: US08270245B2Publication Date: 2012-09-18
- Inventor: Chung-Kuang Chen , Yi-Te Shih , Chun-Hsiung Hung
- Applicant: Chung-Kuang Chen , Yi-Te Shih , Chun-Hsiung Hung
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Thomas|Kayden
- Main IPC: G11C8/00
- IPC: G11C8/00
Abstract:
A memory device comprises first memory block having first boundary cell and second memory block having second boundary cell. Data of the first and the second boundary cells are outputted simultaneously corresponding to a plurality of column selection signals.
Public/Granted literature
- US20110164461A1 Memory Device Public/Granted day:2011-07-07
Information query
