Invention Grant
- Patent Title: Word line driving circuit and semiconductor storage device
- Patent Title (中): 字线驱动电路和半导体存储器件
-
Application No.: US12885305Application Date: 2010-09-17
-
Publication No.: US08270247B2Publication Date: 2012-09-18
- Inventor: Takahiko Sasaki
- Applicant: Takahiko Sasaki
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Priority: JP2009-296421 20091225
- Main IPC: G11C8/08
- IPC: G11C8/08
Abstract:
According to one embodiment, a word line driving circuit includes a driver and a booster circuit. The driver drives a word line based on an output of an inverter. The booster circuit connects a boosting capacitor to a source side of a P-channel field effect transistor of the inverter to boost the potential of the word line.
Public/Granted literature
- US20110158029A1 WORD LINE DRIVING CIRCUIT AND SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2011-06-30
Information query
