Invention Grant
- Patent Title: Semiconductor laser device
- Patent Title (中): 半导体激光器件
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Application No.: US12718009Application Date: 2010-03-05
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Publication No.: US08270446B2Publication Date: 2012-09-18
- Inventor: Takashi Shiota , Takeshi Kitatani
- Applicant: Takashi Shiota , Takeshi Kitatani
- Applicant Address: JP Kanagawa
- Assignee: Oclaro Japan, Inc.
- Current Assignee: Oclaro Japan, Inc.
- Current Assignee Address: JP Kanagawa
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2009-61093 20090313
- Main IPC: H01S5/00
- IPC: H01S5/00
Abstract:
High performance and high reliability of a semiconductor laser device having a buried-hetero structure are achieved. The semiconductor laser device having a buried-hetero structure is manufactured by burying both sides of a mesa structure by a Ru-doped InGaP wide-gap layer and subsequently by a Ru-doped InGaP graded layer whose composition is graded from InGaP to InP, and then, by a Ru-doped InP layer. By providing the Ru-doped InGaP graded layer between the Ru-doped InGaP wide-gap layer and the Ru-doped InP layer, the Ru-doped InGaP wide-gap layer and the Ru-doped InP layer not lattice-matching with each other can be formed as a buried layer with excellent crystallinity.
Public/Granted literature
- US20100232468A1 SEMICONDUCTOR LASER DEVICE Public/Granted day:2010-09-16
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